SPB11N60C3ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPB11N60C3ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
Datasheet	SPB11N60C3ATMA1 Datasheet
In Stock	655

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	11 A
Maximum Pulsed Drain Current (IDM):	33 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.38 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	340 mJ
Other Names:	SPB11N60C3 SPB11N60C3ATMA1TR SPB11N60C3INDKR SPB11N60C3XTINTR-ND SPB11N60C3XTINTR SPB11N60C3ATMA1DKR SPB11N60C3INDKR-ND SPB11N60C3XT SPB11N60C3INCT-NDR SPB11N60C3INCT SPB11N60C3INTR SPB11N60C3XTINCT-ND SPB11N60C3INTR-NDR SPB11N60C3ATMA1CT SP000013519 SPB11N60C3INCT-ND SPB11N60C3XTINCT SPB11N60C3INTR-ND
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
655	-	-

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