SPD01N50M2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPD01N50M2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 11 W; No. of Elements: 1; Terminal Form: GULL WING;
Datasheet	SPD01N50M2 Datasheet
In Stock	208

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.8 A
Maximum Pulsed Drain Current (IDM):	1.6 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	11 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.8 A
Maximum Drain-Source On Resistance:	6 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
208	-	-

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