Infineon Technologies - SPD04N60C3AT

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SPD04N60C3AT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD04N60C3AT
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; Package Shape: RECTANGULAR;
Datasheet SPD04N60C3AT Datasheet
In Stock627
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Maximum Pulsed Drain Current (IDM): 13.5 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 94 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .95 ohm
Avalanche Energy Rating (EAS): 130 mJ
Maximum Feedback Capacitance (Crss): 15 pF
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
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