Infineon Technologies - SPHX0N60S5

SPHX0N60S5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPHX0N60S5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 415 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
Datasheet SPHX0N60S5 Datasheet
In Stock42
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 47.3 A
Maximum Pulsed Drain Current (IDM): 95 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 415 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .07 ohm
Avalanche Energy Rating (EAS): 1800 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 47.3 A
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