Infineon Technologies - SPI11N60C3XKSA1

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SPI11N60C3XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPI11N60C3XKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
Datasheet SPI11N60C3XKSA1 Datasheet
In Stock855
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 33 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
Maximum Turn Off Time (toff): 79 ns
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .38 ohm
Avalanche Energy Rating (EAS): 340 mJ
Maximum Feedback Capacitance (Crss): 30 pF
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
855 $1.410 $1,205.550

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