Infineon Technologies - SPL2F98

  1. Home
  2. Infineon Technologies - SPL2F98
SPL2F98 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SPL2F98
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 3 m; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel;
Datasheet SPL2F98 Datasheet
In Stock980
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Peak Wavelength (nm): 975
Spectral Bandwidth: 3 m
Maximum Operating Temperature: 60 Cel
Sub-Category: Laser Diodes
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
980 - -

Popular Products

Category Top Products

SDL4030-001 by Onsemi

SDL4030-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 65 Cel;
STH81002Z by Infineon Technologies

STH81002Z

Infineon Technologies

LASER DIODE; No. of Functions: 1; Peak Wavelength (nm): 1510; Maximum Threshold Current: 15 mA; Nominal Output Power: 6 W; Shape: ROUND;
NX8570SA389-BA by Renesas Electronics

NX8570SA389-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1539; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel;
NX8571SC811-BA by Renesas Electronics

NX8571SC811-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1581; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
SDL4034-101 by Onsemi

SDL4034-101

Onsemi

SDL4034-101 by Onsemi is an 800nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
NX8571SC449-BA-A by Renesas Electronics

NX8571SC449-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
TOLD9453MB by Toshiba

TOLD9453MB

Toshiba

LASER DIODE; Shape: ROUND; Maximum Threshold Current: 50 mA; Size: 1.8 mm; Nominal Output Power: 50 W; No. of Functions: 1;
STH81001Z by Infineon Technologies

STH81001Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .12 A; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V;
SDL3144-111 by Onsemi

SDL3144-111

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 60 Cel;
SDL6030-101 by Onsemi

SDL6030-101

Onsemi

SDL6030-101 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in optoelectronics and telecommunications.
STM81004A by Infineon Technologies

STM81004A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Spectral Bandwidth: 5 m; Maximum Operating Temperature: 85 Cel; Maximum Forward Voltage: 1.5 V;
STL51705A by Infineon Technologies

STL51705A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Minimum Operating Temperature: -40 Cel; Spectral Bandwidth: 5 m; Maximum Forward Voltage: 1.5 V;
NX8565LE895-CC by Renesas Electronics

NX8565LE895-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000000000125 s; Maximum Forward Current: .1 A; Peak Wavelength (nm): 1590; Minimum Operating Temperature: -20 Cel;
SDL8033-201 by Onsemi

SDL8033-201

Onsemi

SDL8033-201 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications like optical sensors and medical devices.
NX8563LF954-BA-A by Renesas Electronics

NX8563LF954-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1595; Maximum Forward Current: .3 A; Maximum Forward Voltage: 1.5 V;
NX8567SAS553-BC by Renesas Electronics

NX8567SAS553-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel;
TOLD9442M(TR) by Toshiba

TOLD9442M(TR)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 3 V; Peak Wavelength (nm): 650; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP;
TOLD320ACA by Toshiba

TOLD320ACA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V;
TOLD321AAA by Toshiba

TOLD321AAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1310;
NX8570SC954-BA-A by Renesas Electronics

NX8570SC954-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1595; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;