Infineon Technologies - SPNX6N60S5

SPNX6N60S5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPNX6N60S5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
Datasheet SPNX6N60S5 Datasheet
In Stock385
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .85 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .85 A
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .95 ohm
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