Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SPU02N60C3 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 5.4 A; |
| Datasheet | SPU02N60C3 Datasheet |
| In Stock | 238 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 1.8 A |
| Maximum Pulsed Drain Current (IDM): | 5.4 A |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 25 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| Maximum Turn Off Time (toff): | 100 ns |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 3 ohm |
| Avalanche Energy Rating (EAS): | 50 mJ |
| JEDEC-95 Code: | TO-251 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 600 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
| Maximum Drain Current (Abs) (ID): | 1.8 A |
