Infineon Technologies - SPU02N60C3

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SPU02N60C3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPU02N60C3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 5.4 A;
Datasheet SPU02N60C3 Datasheet
In Stock238
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.8 A
Maximum Pulsed Drain Current (IDM): 5.4 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
Maximum Turn Off Time (toff): 100 ns
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 3 ohm
Avalanche Energy Rating (EAS): 50 mJ
JEDEC-95 Code: TO-251
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 1.8 A
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Pricing (USD)

Qty. Unit Price Ext. Price
238 $2.280 $542.640

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