T2161N48TOH by Infineon Technologies | Triggering Devices

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	T2161N48TOH
Description	SCR; Package Style (Meter): DISK BUTTON; Surface Mount: YES; Terminal Position: UNSPECIFIED; Configuration: SINGLE; Nominal Circuit Commutated Turn-off Time: 450 us;
Datasheet	T2161N48TOH Datasheet
In Stock	970

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Trigger Device Type:	SCR
Configuration:	SINGLE
Sub-Category:	Silicon Controlled Rectifiers
Surface Mount:	YES
Maximum Leakage Current:	200 mA
Terminal Finish:	MATTE TIN
Minimum Critical Rate of Rise of Off-state Voltage:	2000 V/us
Maximum Holding Current:	350 mA
No. of Terminals:	3
Terminal Position:	UNSPECIFIED
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-XXDB-X3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Repetitive Peak Off-state Voltage:	4800 V
Maximum RMS On-state Current:	3250 A
Repetitive Peak Reverse Voltage:	4800 V
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Non Repetitive Peak On-state Current:	55000 A
Maximum DC Gate Trigger Voltage:	2.5 V
Maximum DC Gate Trigger Current:	350 mA
Qualification:	Not Qualified
Maximum On-state Current:	2160 A
Nominal Circuit Commutated Turn-off Time:	450 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
970	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;