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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | VH2N7262 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Reference Standard: MIL-19500/601E; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN; |
| In Stock | 272 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 5.5 A |
| JEDEC-95 Code: | TO-205AF |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 200 V |
| Qualification: | Not Qualified |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | MIL-19500/601E |
| Case Connection: | DRAIN |
