70V659S12DRGI8 by Integrated Device Technology | Memory ICs

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Manufacturer	Integrated Device Technology
Manufacturer's Part Number	70V659S12DRGI8
Description	MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: FQFP; Package Shape: SQUARE; Memory Density: 4718592 bit;
Datasheet	70V659S12DRGI8 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.015 Amp
Organization:	128KX36
Output Characteristics:	3-STATE
Maximum Seated Height:	4.1 mm
Minimum Supply Voltage (Vsup):	3.15 V
Sub-Category:	SRAMs
Surface Mount:	YES
Maximum Supply Current:	515 mA
Terminal Finish:	TIN
No. of Terminals:	208
No. of Words:	131072 words
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK, FINE PITCH
Technology:	CMOS
JESD-30 Code:	S-PQFP-G208
Package Shape:	SQUARE
Terminal Form:	GULL WING
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	FQFP
Width:	28 mm
Moisture Sensitivity Level (MSL):	3
Other Names:	IDT70V659S12DRGI8 IDT70V659S12DRGI8-ND
Input/Output Type:	COMMON
No. of Ports:	2
Memory Density:	4718592 bit
Minimum Standby Voltage:	3.15 V
Memory IC Type:	MULTI-PORT SRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Memory Width:	36
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	QFP208,1.2SQ,20
Length:	28 mm
Maximum Access Time:	12 ns
No. of Words Code:	128K
Nominal Supply Voltage / Vsup (V):	3.3
Peak Reflow Temperature (C):	260
Parallel or Serial:	PARALLEL
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.45 V
Power Supplies (V):	2.5/3.3,3.3

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