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| Manufacturer | Integrated Device Technology |
|---|---|
| Manufacturer's Part Number | 71V35761SA200BGI8 |
| Description | CACHE SRAM; Peak Reflow Temperature (C): 225; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Maximum Time At Peak Reflow Temperature (s): 20; |
| Datasheet | 71V35761SA200BGI8 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
IDT71V35761SA200BGI8-ND IDT71V35761SA200BGI8 |
| Maximum Time At Peak Reflow Temperature (s): | 20 |
| Peak Reflow Temperature (C): | 225 |
| Memory IC Type: | CACHE SRAM |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| Moisture Sensitivity Level (MSL): | 3 |








