Integrated Silicon Solution - IS42S32400F-6BL-TR

  1. Home
  2. Integrated Silicon Solution - IS42S32400F-6BL-TR
IS42S32400F-6BL-TR by Integrated Silicon Solution

Image shown is a representation only.

Manufacturer Integrated Silicon Solution
Manufacturer's Part Number IS42S32400F-6BL-TR
Description SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: FBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
Datasheet IS42S32400F-6BL-TR Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .002 Amp
Organization: 4MX32
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 180 mA
No. of Terminals: 90
Maximum Clock Frequency (fCLK): 166 MHz
No. of Words: 4194304 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B90
Package Shape: RECTANGULAR
Terminal Form: BALL
Maximum Operating Temperature: 70 Cel
Package Code: FBGA
Input/Output Type: COMMON
Memory Density: 134217728 bit
Sequential Burst Length: 1,2,4,8,FP
Memory IC Type: SYNCHRONOUS DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 32
Qualification: Not Qualified
Package Equivalence Code: BGA90,9X15,32
Refresh Cycles: 4096
Interleaved Burst Length: 1,2,4,8
Maximum Access Time: 5.4 ns
No. of Words Code: 4M
Nominal Supply Voltage / Vsup (V): 3.3
Terminal Pitch: .8 mm
Temperature Grade: COMMERCIAL
Power Supplies (V): 3.3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MT53E128M32D2DS-046WT:A by Micron Technology

MT53E128M32D2DS-046WT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046WT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in compact devices like smartphones and tablets.
IS43TR16256AL-125KBLI by Integrated Silicon Solution

IS43TR16256AL-125KBLI

Integrated Silicon Solution

IS43TR16256AL-125KBLI by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.
MT48LC4M32B2P-6IT:G by Micron Technology

MT48LC4M32B2P-6IT:G

Micron Technology

Micron Technology's MT48LC4M32B2P-6IT:G is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for industrial applications requiring high memory density and synchronous operation.
MT48LC8M16A2P-6AIT:LTR by Micron Technology

MT48LC8M16A2P-6AIT:LTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6AIT:LTR is a 3.3V, 8MX16 CMOS Synchronous DRAM with 8388608 words and 134217728 bit memory density. It operates in industrial temperature range (-40 to 85 °C) with self-refresh capability. Ideal for applications requiring fast access time (5.4 ns) and four bank page burst access mode.
S27KS0642GABHV020 by Cypress Semiconductor

S27KS0642GABHV020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Width: 6 mm; Minimum Operating Temperature: -40 Cel;
IS42S16160J-7BLI by Integrated Silicon Solution

IS42S16160J-7BLI

Integrated Silicon Solution

IS42S16160J-7BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16M words code. It operates at 3.3V, has a memory density of 268435456 bits, and offers a max access time of 7ns. Ideal for industrial applications requiring high-speed memory solutions in compact form factors.
MT48LC16M16A2P-6A by Micron Technology

MT48LC16M16A2P-6A

Micron Technology

MT48LC16M16A2P-6A by Micron Technology is a 16MX16 DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is used in commercial applications requiring synchronous memory ICs with a memory density of 268435456 bits.
KM44C256BP-7 by Samsung

KM44C256BP-7

Samsung

Samsung's KM44C256BP-7 is a 256Kx4 DRAM with 262144 words and memory density of 1048576 bits. Operating at 5V, it has a max access time of 70ns and refresh cycles of 512. Ideal for applications requiring fast page access in commercial temperature grades.
EDB4432BBBJ-1DAIT-F by Micron Technology

EDB4432BBBJ-1DAIT-F

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F is a PLASTIC/EPOXY DRAM with 128MX32 organization and 32-bit memory width. It operates synchronously, has self-refresh capability, and is suitable for industrial applications.
AS4C256M16D4-83BCN by Alliance Memory

AS4C256M16D4-83BCN

Alliance Memory

Alliance Memory's AS4C256M16D4-83BCN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply voltage. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
AS4C256M16D3LC-12BIN by Alliance Memory

AS4C256M16D3LC-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BIN is a 256MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it offers 8192 refresh cycles and supports multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT48LC32M16A2P-75 by Micron Technology

MT48LC32M16A2P-75

Micron Technology

MT48LC32M16A2P-75 by Micron Technology is a 32MX16 DRAM with 3.3V supply, 133MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring synchronous memory with common I/O and self-refresh capabilities.
M378B5773DH0-CH9 by Samsung

M378B5773DH0-CH9

Samsung

Samsung M378B5773DH0-CH9 DDR DRAM offers 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for applications requiring high-speed data processing and large memory capacity in microelectronic assemblies.
MT48LC8M16A2TG-6A:G by Micron Technology

MT48LC8M16A2TG-6A:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for applications requiring fast memory access and high data density in commercial temperature environments.
W66CP2NQUAHJ by Winbond Electronics

W66CP2NQUAHJ

Winbond Electronics

Winbond Electronics LPDDR4 DRAM W66CP2NQUAHJ features 128MX32 organization, operates at up to 2136.7 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices with limited space constraints.
MT48LC16M16A2B4-7EIT:G by Micron Technology

MT48LC16M16A2B4-7EIT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
MT41J128M16JT-093:K by Micron Technology

MT41J128M16JT-093:K

Micron Technology

Micron Technology's MT41J128M16JT-093:K is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
IS42S32800J-6TL by Integrated Silicon Solution

IS42S32800J-6TL

Integrated Silicon Solution

IS42S32800J-6TL by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 86 terminals, and supports four bank page burst access mode. Ideal for applications requiring high-speed memory performance in commercial temperature environments.
KM4132G112Q-5 by Samsung

KM4132G112Q-5

Samsung

Samsung's KM4132G112Q-5 is a 1MX32 DRAM with 3.3V supply, operating at 200MHz clock frequency. Ideal for synchronous graphics RAM applications due to its 1048576 words capacity, 4.5ns access time, and dual bank page burst access mode.
MT40A512M16TB-062EIT:R by Micron Technology

MT40A512M16TB-062EIT:R

Micron Technology

Micron Technology's MT40A512M16TB-062EIT:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in thin-profile devices.