Intel Corporation - BX80574E5440A

BX80574E5440A by Intel Corporation

Image shown is a representation only.

Manufacturer	Intel Corporation
Manufacturer's Part Number	BX80574E5440A
Description	Intel; Product Line: Xeon DP; Product Model: E5440; Product Type: Processor; Processor Socket: Socket J; Product Name: Xeon DP Quad-Core E5440 2.83GHz Processor;
In Stock	470

BX80574E5440A Technical Details

NAME	DESCRIPTION
L2 Cache:	12 MB
Product Name:	Xeon DP Quad-Core E5440 2.83GHz Processor
Clock Speed:	2.83 GHz
Platform Supported:	PC
Limited Warranty:	3 Year
Package Type:	Retail
Brand Name:	Intel
Processor Core:	Quad-core (4 Core)
Additional Information:	Execute Disable Bit
Marketing Information:	The breakthrough performance, energy efficiency, and reliability of Intel Xeon processor based server systems make them the ideal choice for all of your data demanding or standard enterprise infrastructure applications.
Process Technology:	45 nm
Processor Manufacturer:	Intel
Product Type:	Processor
Processor Socket:	Socket J
Product Model:	E5440
Bus Speed:	1333 MHz
Product Line:	Xeon DP
Front Side Bus:	1333 MHz

Pricing (USD)

Qty.	Unit Price	Ext. Price
470	-	-

Popular Products

LM555CM

Intersil

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

LM555CN

Rca Solid State

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

2N7002

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

IRLML6401TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

EPCS4SI8N

Intel

EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.

LL4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BSS138LT1G

Onsemi

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.

2N7002

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;

SBAV99LT1G

Onsemi

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

BSS138

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;