International Rectifier - IRF3205STRLPBF

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IRF3205STRLPBF by International Rectifier

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Manufacturer International Rectifier
Manufacturer's Part Number IRF3205STRLPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Minimum DS Breakdown Voltage: 55 V; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE;
Datasheet IRF3205STRLPBF Datasheet
In Stock7,283
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 115 ns
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 390 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
No. of Terminals: 2
Maximum Power Dissipation (Abs): 200 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 115 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .008 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 264 mJ
Maximum Feedback Capacitance (Crss): 211 pF
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Maximum Drain Current (Abs) (ID): 110 A
Peak Reflow Temperature (C): 260
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