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Manufacturer | International Rectifier |
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Manufacturer's Part Number | IRG4IBC20KDPBF |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Maximum Collector Current (IC): 11.5 A; Maximum Operating Temperature: 150 Cel; |
Datasheet | IRG4IBC20KDPBF Datasheet |
In Stock | 496 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 11.5 A |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6 V |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN OVER NICKEL |
Nominal Turn Off Time (toff): | 380 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 34 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 88 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Fall Time (tf): | 110 ns |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 600 V |
Maximum Gate-Emitter Voltage: | 20 V |