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| Manufacturer | International Rectifier |
|---|---|
| Manufacturer's Part Number | SI4435DYTR |
| Description | Limited Part Number Data; |
| Datasheet | SI4435DYTR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Category: |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Type: | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds: | 2320 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs: | 60 nC @ 10 V |
| Mounting Type: | Surface Mount |
| Rds On (Max) @ Id, Vgs: | 20mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Supplier Device Package: | 8-SO |
| Standard Package: | 4,000 |
| Drain to Source Voltage (Vdss): | 30 V |
| Series: | HEXFET® |
| Power Dissipation (Max): | 2.5W (Ta) |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Technology: | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Vgs (Max): | ±20V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Package: | Tape & Reel (TR) |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
