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Manufacturer | Intersil |
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Manufacturer's Part Number | HGTG10N120BND |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Maximum Operating Temperature: 150 Cel; |
Datasheet | HGTG10N120BND Datasheet |
In Stock | 3,157 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 35 A |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Maximum Rise Time (tr): | 15 ns |
Transistor Application: | MOTOR CONTROL |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Terminal Finish: | Tin/Lead (Sn/Pb) |
Nominal Turn Off Time (toff): | 330 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 298 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 32 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Maximum Fall Time (tf): | 200 ns |
JEDEC-95 Code: | TO-247 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 1200 V |
Additional Features: | LOW CONDUCTION LOSS |
Maximum Gate-Emitter Voltage: | 20 V |