VWM270-0075X2 by IXYS Corporation | Transistors

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Manufacturer	IXYS Corporation
Manufacturer's Part Number	VWM270-0075X2
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
Datasheet	VWM270-0075X2 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	270 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	17
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X17
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.0021 ohm
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	75 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	270 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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