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Manufacturer | Jiangsu Changjiang Electronics Technology |
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Manufacturer's Part Number | 2N7000 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JEDEC-95 Code: TO-92; Transistor Application: SWITCHING; |
Datasheet | 2N7000 Datasheet |
In Stock | 46,113 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 5 pF |
Maximum Drain Current (ID): | .2 A |
JEDEC-95 Code: | TO-92 |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Power Dissipation (Abs): | .35 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | .2 A |
Maximum Drain-Source On Resistance: | 5 ohm |