Kec - BD139

  1. Home
  2. Kec - BD139
BD139 by Kec

Image shown is a representation only.

Manufacturer Kec
Manufacturer's Part Number BD139
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; Minimum DC Current Gain (hFE): 25;
Datasheet BD139 Datasheet
In Stock64,410
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.5 A
Configuration: SINGLE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-126
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 25
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
64,410 - -

Popular Products

Category Top Products

BD139 by Onsemi

BD139

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP117 by Changzhou Galaxy Century Microelectronics

TIP117

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; No. of Elements: 1; Minimum Operating Temperature: -65 Cel;
TIP142T by Continental Device India

TIP142T

Continental Device India

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
TIP31C by Taitron Components

TIP31C

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 100 V;
TIP35C by STMicroelectronics

TIP35C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP111 by Transys Electronics

TIP111

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB;
MJD45H11-1G by Onsemi

MJD45H11-1G

Onsemi

MJD45H11-1G by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is in-line with matte tin finish, suitable for through-hole mounting.
BD679A by Samsung

BD679A

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP125 by Panasonic

TIP125

Panasonic

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
TIP120 by Fairchild Semiconductor

TIP120

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB;
JANTX2N3055 by Vpt Components

JANTX2N3055

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A; Transistor Application: SWITCHING;
TIP117 by Power Innovations

TIP117

Power Innovations

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; Terminal Position: SINGLE;
TIP147 by Central Semiconductor

TIP147

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON;
TIP127 by Crimson Semiconductor

TIP127

Crimson Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP120G by Onsemi

TIP120G

Onsemi

TIP120G by Onsemi is a NPN power BJT with 65W power dissipation, 1000 min hFE, and 60V max collector-emitter voltage. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
BD139-16 by Samsung

BD139-16

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
MJE3055T by Inchange Semiconductor

MJE3055T

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP112 by Continental Device India

TIP112

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Position: SINGLE;
BD140-16 by Continental Device India

BD140-16

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
2N3055 by Electronic Transistors

2N3055

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;