KVR4X32-60ET/16 by Kingston Technology Company | Memory

Image shown is a representation only.

Manufacturer	Kingston Technology Company
Manufacturer's Part Number	KVR4X32-60ET/16
Description	Kingston; Product Line: ValueRAM; Product Type: RAM Module; Package Type: Retail; Memory Size: 16 MB; Memory Technology: EDO DRAM;

NAME	DESCRIPTION
Environmental Certification:	RoHS, China RoHS, WEEE
Environmentally Friendly:	Yes
Product Name:	16MB EDO DRAM Memory Module
Input Voltage:	5.0 V DC
Limited Warranty:	Lifetime
Error Checking:	Non-ECC
Packaged Quantity:	1
Package Type:	Retail
Brand Name:	Kingston
Thickness:
Module Configuration:	4M x 32
Memory Technology:	EDO DRAM
Additional Information:	FEATURES: Timing Parameter 60ns RAS Access Time (tRAC) 60ns Column Address Access Time (tAA) 30ns Cycle Time (tRC) 104ns Hyper Page Cycle Time (tHPC) 25ns Single Power Supply of +5V (+/- 10%) UL Rating 94 V - 0 RAM Data Width: 32 Bit Refresh: 2K Low Power: 4.84 W (operating) 88 mW (max. standby) Pulse Width (tRAS) 60ns (min.) 10,000ns (max.)
Marketing Information:	ValueRAM is Kingston's high-quality line of 'by spec' generic memory designed with the price conscious system builder, assembler and white box markets in mind.
Access Time:	60 ns
Number of Modules:	1 x 16MB
Memory Size:	16 MB
Length:	4.25 "
Product Type:	RAM Module
Number of Pins:	72-pin
Plating:	Tin
Compatibility:	-
Width:	1 "
Product Line:	ValueRAM

Popular Products

Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;

NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.