Leshan Radio - LMUN5111T1G

  1. Home
  2. Leshan Radio - LMUN5111T1G
LMUN5111T1G by Leshan Radio

Image shown is a representation only.

Manufacturer Leshan Radio
Manufacturer's Part Number LMUN5111T1G
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
Datasheet LMUN5111T1G Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .31 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 35
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC846B-7-F by Diodes Incorporated

BC846B-7-F

Diodes Incorporated

Diodes Inc. BC846B-7-F is a NPN BJT transistor with hFE of 200, VCE of 65V, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates b/w -65 to 150°C, meeting AEC-Q101 standards for automotive use.
BC807-40W,115 by NXP Semiconductors

BC807-40W,115

NXP Semiconductors

BC807-40W,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. With a VCEsat of 0.7V and hFE of 250, it can handle up to 0.5A collector current. Operating at a max temperature of 150°C, this transistor has a transition frequency of 80MHz making it suitable for high-speed switching circuits.
MMBT3906VL by Nexperia

MMBT3906VL

Nexperia

Nexperia's MMBT3906VL is a PNP BJT transistor with hFE of 30, VCEO of 40V, and ton of 70ns. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 250MHz.
BC846B,215 by NXP Semiconductors

BC846B,215

NXP Semiconductors

NXP Semiconductors' BC846B,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 200, it can handle IC up to 0.1A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.
MMBT3906 by Bytesonic Electronics

MMBT3906

Bytesonic Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
2N3906 by Toshiba

2N3906

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2905A by Microchip Technology

2N2905A

Microchip Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2222A by Fairchild Semiconductor

2N2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3906 by Semitronics

2N3906

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-25 by Kec

BC817-25

Kec

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .8 A;
BC547-B by Samsung

BC547-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
2N3906 by Nte Electronics

2N3906

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
BC846BW-7-F by Diodes Incorporated

BC846BW-7-F

Diodes Incorporated

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.
BC847C by Philips Components

BC847C

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: GULL WING;
MMBT3904 by Jiangsu Changjiang Electronics Technology

MMBT3904

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
BC846BPDW1T1G by Onsemi

BC846BPDW1T1G

Onsemi

BC846BPDW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types. It has a max VCEsat of 0.65V, hFE of 200, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and dual terminal position for surface mount assembly.
MMBT3904,215 by Nexperia

MMBT3904,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-236AB;
MMBT2907AWT1G by Rochester Electronics

MMBT2907AWT1G

Rochester Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
MMBT2222ALT1 by Shenzhen Luguang Electronic Technology

MMBT2222ALT1

Shenzhen Luguang Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMBT2907A by National Semiconductor

MMBT2907A

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .8 A;