Leshan Radio - LP2301LT1G

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LP2301LT1G by Leshan Radio

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Manufacturer Leshan Radio
Manufacturer's Part Number LP2301LT1G
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet LP2301LT1G Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .9 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.3 A
Maximum Drain Current (Abs) (ID): 2.3 A
Sub-Category: Other Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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