Leshan Radio - S-LBC807-40LT1G

  1. Home
  2. Leshan Radio - S-LBC807-40LT1G
S-LBC807-40LT1G by Leshan Radio

Image shown is a representation only.

Manufacturer Leshan Radio
Manufacturer's Part Number S-LBC807-40LT1G
Description Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet S-LBC807-40LT1G Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2907AUB by Microsemi

2N2907AUB

Microsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;
BC547C by Forward International Electronics

BC547C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
2N3904 by Renesas Technology

2N3904

Renesas Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
BC847B by Dc Components

BC847B

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
BC847B by Philips Components

BC847B

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: GULL WING;
2N3904 by Plessey Semiconductors

2N3904

Plessey Semiconductors

NPN; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 100; Transistor Application: AMPLIFIER; Maximum Collector-Emitter Voltage: 40 V;
BC846B,215 by NXP Semiconductors

BC846B,215

NXP Semiconductors

NXP Semiconductors' BC846B,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 200, it can handle IC up to 0.1A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.
BC847B by Vishay Semiconductors

BC847B

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
2N3906 by STMicroelectronics

2N3906

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC547-C by Secos

BC547-C

Secos

Secos BC547-C is a NPN BJT with hFE of 110, VCE of 45V, and fT of 150MHz. Ideal for low-power applications in electronics due to its 0.1A IC rating and silicon transistor element material. Its through-hole package makes it suitable for various circuit configurations.
BC817-40 by Itt Semiconductor

BC817-40

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; JEDEC-95 Code: TO-236; Maximum Collector-Base Capacitance: 12 pF;
MMBT5551LT1G by Onsemi

MMBT5551LT1G

Onsemi

MMBT5551LT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.2V, hFE of 30, and IC of 0.06A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 160V. Its small outline package makes it suitable for surface mount designs.
MMBT2222AM3T5G by Onsemi

MMBT2222AM3T5G

Onsemi

MMBT2222AM3T5G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with matte tin finish and operates up to 150°C.
BC817-40 by Diodes Incorporated

BC817-40

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT3904-7-F by Diodes Incorporated

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
2N2222A by Nte Electronics

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
MMBT2907A by Kodenshi Auk

MMBT2907A

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL;
BC817-25-7-F by Diodes Incorporated

BC817-25-7-F

Diodes Incorporated

Diodes Inc's BC817-25-7-F is a NPN small signal BJT transistor with a max collector-emitter voltage of 45V and max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 100 and fast nominal transition frequency of 100MHz.
BC847-C by Samsung

BC847-C

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
MMBT2222ALT1 by Leshan Radio

MMBT2222ALT1

Leshan Radio

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;