
Image shown is a representation only.
Manufacturer | Lite-on Semiconductor |
---|---|
Manufacturer's Part Number | BS170 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: WIRE; Terminal Position: BOTTOM; |
Datasheet | BS170 Datasheet |
In Stock | 28,282 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .3 A |
JEDEC-95 Code: | TO-92 |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain-Source On Resistance: | 5 ohm |