Littelfuse - FID35-06C

  1. Home
  2. Littelfuse - FID35-06C
FID35-06C by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number FID35-06C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 38 A; JESD-609 Code: e1;
Datasheet FID35-06C Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 38 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Nominal Turn Off Time (toff): 390 ns
No. of Terminals: 5
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 80 ns
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: HIGH RELIABILITY
Maximum Gate-Emitter Voltage: 20 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SKM400GB12E4 by Semikron International

SKM400GB12E4

Semikron International

SKM400GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle a Max Collector Current of 618A. Ideal for POWER CONTROL applications due to its fast Nominal Turn Off Time of 681ns and high Max Collector-Emitter Voltage of 1200V.
SGD02N120BUMA1 by Infineon Technologies

SGD02N120BUMA1

Infineon Technologies

Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.
CM200DU-12NFH by Powerex

CM200DU-12NFH

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
2MBI100VA-060-50 by Fujitsu

2MBI100VA-060-50

Fujitsu

Fujitsu 2MBI100VA-060-50 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, current of 100A, and turn-off time of 600ns. Ideal for MOTOR CONTROL applications due to its configuration and performance specs.
FGH40N60SFTU by Fairchild Semiconductor

FGH40N60SFTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 3;
IXXH100N60B3 by IXYS Corporation

IXXH100N60B3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 210 A; Nominal Turn On Time (ton): 92 ns;
FGH40N60SMDF by Fairchild Semiconductor

FGH40N60SMDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
6PS18012E4FG38393NWSA1 by Infineon Technologies

6PS18012E4FG38393NWSA1

Infineon Technologies

N-Channel; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V; Minimum Operating Temperature: -25 Cel;
TDB6HK180N16RRBOSA1 by Infineon Technologies

TDB6HK180N16RRBOSA1

Infineon Technologies

TDB6HK180N16RRBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 140A IC, and 515W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 410ns and high operating temperature range from -40°C to 150°C.
ISL9V3036S3ST by Fairchild Semiconductor

ISL9V3036S3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Peak Reflow Temperature (C): 260;
IRG4PC50FD-EPBF by Infineon Technologies

IRG4PC50FD-EPBF

Infineon Technologies

IRG4PC50FD-EPBF by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 600V and current of 70A. It has a turn-off time of 660ns and turn-on time of 86ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals for easy installation.
FP35R12KT4BOSA1 by Infineon Technologies

FP35R12KT4BOSA1

Infineon Technologies

FP35R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn-off time of 620ns. It is used in applications requiring high power switching capabilities at up to 150°C operating temperature. The transistor's silicon material and complex configuration make it suitable for various industrial uses.
IKZ75N65ES5XKSA1 by Infineon Technologies

IKZ75N65ES5XKSA1

Infineon Technologies

IKZ75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package and THROUGH-HOLE terminals make it suitable for various industrial uses.
CPV364M4FPBF by International Rectifier

CPV364M4FPBF

International Rectifier

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 27 A; Nominal Turn Off Time (toff): 410 ns; Qualification: Not Qualified;
APTGLQ100DA120T1G by Microsemi

APTGLQ100DA120T1G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;
HGTG40N60B3 by Fairchild Semiconductor

HGTG40N60B3

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Transistor Application: POWER CONTROL;
AOTF15B65M1 by Alpha & Omega Semiconductor

AOTF15B65M1

Alpha & Omega Semiconductor

Insulated Gate Bipolar Transistors;
IRG4BC20UD-SPBF by International Rectifier

IRG4BC20UD-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Case Connection: COLLECTOR;
HGTG10N120BND by Onsemi

HGTG10N120BND

Onsemi

HGTG10N120BND by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 35A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn off time of 330ns. Package style: Flange mount, terminal finish: Matte Tin, operating temp: 150°C.
IRG4BC10SD-SPBF by International Rectifier

IRG4BC10SD-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Collector Current (IC): 14 A; Terminal Position: SINGLE;