
Image shown is a representation only.
Manufacturer | Littelfuse |
---|---|
Manufacturer's Part Number | GMM3X60-015X2-SMD |
Description | N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .024 ohm; Terminal Position: DUAL; Transistor Element Material: SILICON; |
Datasheet | GMM3X60-015X2-SMD Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 50 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | TIN SILVER |
No. of Terminals: | 24 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G24 |
No. of Elements: | 6 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .024 ohm |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e2 |
Minimum DS Breakdown Voltage: | 150 V |
Maximum Drain Current (Abs) (ID): | 57 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |