GMM3X60-015X2 by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	GMM3X60-015X2
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: ISOLATED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
Datasheet	GMM3X60-015X2 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	57 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	Tin (984) Over Nickel (39)
No. of Terminals:	24
Minimum DS Breakdown Voltage:	150 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G24
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.022 ohm

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