Littelfuse - GWM100-0085X1-SL

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GWM100-0085X1-SL by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number GWM100-0085X1-SL
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 17; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
Datasheet GWM100-0085X1-SL Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 103 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 17
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-PDFP-F17
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0062 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 85 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 103 A
Peak Reflow Temperature (C): NOT SPECIFIED
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