Littelfuse - IXFD21N50F-7F

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IXFD21N50F-7F by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXFD21N50F-7F
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Minimum DS Breakdown Voltage: 500 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IXFD21N50F-7F Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Maximum Drain-Source On Resistance: .27 ohm
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