IXFH12N80P by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXFH12N80P
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 800 V; Peak Reflow Temperature (C): 260;
Datasheet	IXFH12N80P Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	36 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.85 ohm
Avalanche Energy Rating (EAS):	800 mJ
JEDEC-95 Code:	TO-247AD
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	260

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