IXFM7N80 by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXFM7N80
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	IXFM7N80 Datasheet

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	7 A
Maximum Pulsed Drain Current (IDM):	28 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	2
Maximum Power Dissipation (Abs):	180 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	180 W
Maximum Drain-Source On Resistance:	1.4 ohm
JEDEC-95 Code:	TO-204
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	7 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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