Littelfuse - IXFN27N80Q

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IXFN27N80Q by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXFN27N80Q
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum DS Breakdown Voltage: 800 V; Package Body Material: PLASTIC/EPOXY;
Datasheet IXFN27N80Q Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 27 A
Maximum Pulsed Drain Current (IDM): 108 A
Surface Mount: NO
No. of Terminals: 4
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .32 ohm
Avalanche Energy Rating (EAS): 2500 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
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