Littelfuse - IXFV12N90P

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IXFV12N90P by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXFV12N90P
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 900 V;
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 24 A
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .9 ohm
Avalanche Energy Rating (EAS): 500 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 900 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
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