Littelfuse - IXGT40N60A3D1

  1. Home
  2. Littelfuse - IXGT40N60A3D1
IXGT40N60A3D1 by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number IXGT40N60A3D1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 75 A; Transistor Application: MOTOR CONTROL; Nominal Turn On Time (ton): 48 ns;
Datasheet IXGT40N60A3D1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 75 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
JEDEC-95 Code: TO-268AA
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: PURE TIN
Nominal Turn Off Time (toff): 1180 ns
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 48 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FGP10N60UNDF by Fairchild Semiconductor

FGP10N60UNDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 139 W; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-PSFM-T3;
IRGP4266DPBF by Infineon Technologies

IRGP4266DPBF

Infineon Technologies

Infineon's IRGP4266DPBF is an N-CHANNEL IGBT with tr of 90ns and tf of 80ns. It boasts a max power dissipation of 455W, ideal for high-power applications. With Vce(max) at 650V and Ic(max) at 140A, it's suitable for industrial motor drives and renewable energy systems.
CM200DU-12NFH by Powerex

CM200DU-12NFH

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
IXXH50N60C3D1 by Littelfuse

IXXH50N60C3D1

Littelfuse

IXXH50N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 100A. It is commonly used for power control applications due to its high power dissipation of 600W and fast nominal turn off time (toff) of 170ns.
FGH40N65UFDTU_F085 by Fairchild Semiconductor

FGH40N65UFDTU_F085

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL;
FS75R12KE3B9BOSA1 by Infineon Technologies

FS75R12KE3B9BOSA1

Infineon Technologies

FS75R12KE3B9BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 105A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
FGH50N6S2D by Fairchild Semiconductor

FGH50N6S2D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified;
IRG4PSH71KDPBF by Infineon Technologies

IRG4PSH71KDPBF

Infineon Technologies

IRG4PSH71KDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 78A. It has a single configuration with built-in diode, making it ideal for motor control applications. With a max power dissipation of 140W and operating temperature of 150°C, this transistor offers fast switching times for efficient performance.
IGP50N60TXKSA1 by Infineon Technologies

IGP50N60TXKSA1

Infineon Technologies

IGP50N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can operate at temperatures up to 175°C.
IRG4PF50WPBF by International Rectifier

IRG4PF50WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 51 A; JEDEC-95 Code: TO-247AC;
APTGT750U60D4G by Microsemi

APTGT750U60D4G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 1000 A; Terminal Form: UNSPECIFIED;
IRG4PC50FPBF by Infineon Technologies

IRG4PC50FPBF

Infineon Technologies

IRG4PC50FPBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 70A max collector current. It has a 190ns max fall time, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals.
APT100GN60B2G by Microsemi

APT100GN60B2G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Case Connection: COLLECTOR;
IXXX110N65B4H1 by IXYS Corporation

IXXX110N65B4H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 250 A; Nominal Turn On Time (ton): 65 ns;
APT100GN60LDQ4G by Microchip Technology

APT100GN60LDQ4G

Microchip Technology

Microchip Technology's APT100GN60LDQ4G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it features a built-in diode, 96ns turn-on time, and 435ns turn-off time. Suitable for high-power systems requiring up to 625W dissipation in a flange mount package.
IRG7PH42UD-EP by Infineon Technologies

IRG7PH42UD-EP

Infineon Technologies

IRG7PH42UD-EP by Infineon is an N-channel IGBT with 1200V max collector-emitter voltage and 85A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a max power dissipation of 320W and operating temperature of 150°C, it offers fast switching times of 41ns rise, 86ns fall, and 444ns turn-off.
FGH40N60SFDTU-F085 by Onsemi

FGH40N60SFDTU-F085

Onsemi

FGH40N60SFDTU-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.
HGTG11N120CND by Fairchild Semiconductor

HGTG11N120CND

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Rise Time (tr): 16 ns;
FP35R12KT4B15BOSA1 by Infineon Technologies

FP35R12KT4B15BOSA1

Infineon Technologies

FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
IXYN82N120C3H1 by IXYS Corporation

IXYN82N120C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 105 A; Terminal Form: UNSPECIFIED;