Littelfuse - IXTD02N50D-1M

IXTD02N50D-1M by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number IXTD02N50D-1M
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Operating Mode: DEPLETION MODE; No. of Elements: 1; Transistor Application: SWITCHING; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet IXTD02N50D-1M Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
No. of Elements: 1
Operating Mode: DEPLETION MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Maximum Drain-Source On Resistance: 30 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products