Littelfuse - IXTM50N20

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IXTM50N20 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTM50N20
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 2; Package Body Material: METAL;
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 200 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 2
Maximum Power Dissipation (Abs): 250 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 300 W
Maximum Drain-Source On Resistance: .045 ohm
JEDEC-95 Code: TO-204AE
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 50 A
Peak Reflow Temperature (C): NOT SPECIFIED
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