Littelfuse - IXTN600N04T2

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IXTN600N04T2 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTN600N04T2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Avalanche Energy Rating (EAS): 3000 mJ; Maximum Operating Temperature: 175 Cel;
Datasheet IXTN600N04T2 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 600 A
Maximum Pulsed Drain Current (IDM): 1800 A
Surface Mount: NO
Terminal Finish: NICKEL
No. of Terminals: 4
Maximum Power Dissipation (Abs): 940 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0013 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 3000 mJ
Maximum Feedback Capacitance (Crss): 1470 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): 260
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