Littelfuse - IXTT1N300P3HV

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IXTT1N300P3HV by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTT1N300P3HV
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 195 W; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSSO-G2;
Datasheet IXTT1N300P3HV Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 17 pF
Maximum Drain Current (ID): 1 A
JEDEC-95 Code: TO-268AA
Maximum Pulsed Drain Current (IDM): 2.6 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 2
Minimum DS Breakdown Voltage: 3000 V
Maximum Power Dissipation (Abs): 195 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 50 ohm
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