IXTZ550N055T2 by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXTZ550N055T2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Avalanche Energy Rating (EAS): 3000 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	IXTZ550N055T2 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	550 A
Maximum Pulsed Drain Current (IDM):	1650 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	600 W
Terminal Position:	DUAL
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-PDFP-F6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.001 ohm
Avalanche Energy Rating (EAS):	3000 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	550 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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