Littelfuse - IXYX200N65B3

IKB40N65EH5ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 74A. It is designed for power control applications, featuring a built-in diode, small outline package style, and operating temperature range from -40 to 175 °C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;

Infineon Technologies' FF600R12ME4AB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it offers high power dissipation up to 3350W. With fast turn-off time (toff) of 620ns and turn-on time (ton) of 230ns, this UL RECOGNIZED transistor operates b/w -40°C to 150°C efficiently.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 48 A; JESD-609 Code: e3;

IKW30N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCE of 650V and IC of 55A. It has a toff of 246ns and ton of 31ns, making it ideal for POWER CONTROL applications. The transistor comes in a PLASTIC/EPOXY package style with THROUGH-HOLE terminals.

VS-CPV364M4FPBF by Vishay Intertechnology is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration, 240ns fall time, and -40 to 150°C operating temperature range.

SKM200GB176D by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. It features a Max VCEsat of 2.45V, Max Collector-Emitter Voltage of 1700V, and Max Collector Current of 260A. With a Nominal Turn Off Time of 900ns and Nominal Turn On Time of 405ns, it operates at temperatures up to 150°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Case Connection: COLLECTOR;

IRG4BC30W-SPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 23A. It has a nominal turn-off time of 300ns, making it suitable for power control applications requiring fast switching speeds. With a package style of SMALL OUTLINE and surface mount capability, it offers efficient power dissipation up to 100W in various electronic devices.

IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.

SKM800GA176D by Semikron is an N-CHANNEL IGBT with a max VCEsat of 2.45V and IC of 830A. Ideal for power control applications, it has a toff of 1190ns and ton of 320ns. This single transistor with built-in diode operates at up to 150°C and features a collector-emitter voltage of 1700V.

FGB20N60SFD_F085 by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn-off time of 123ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

FF300R12KT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a max current of 450A. It has a nominal turn-off time of 720ns and turn-on time of 230ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.

IXDN55N120D1 by Littelfuse is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 450W Pd. Ideal for motor control applications due to its built-in diode, UL recognition, and fast turn-on/off times of 170ns and 570ns respectively.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 16 A; Maximum Time At Peak Reflow Temperature (s): 10;

IRGP4640DPBF by Infineon is an N-CHANNEL IGBT with 600V VCEsat, 65A IC, and 250W power dissipation. Ideal for power control applications, it features a built-in diode, 31ns rise time, and -55 to 175°C operating temperature range.

Infineon's SGD02N60BUMA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 6A max collector current. Ideal for motor control applications, it has a turn-off time of 354ns and turn-on time of 34ns. This surface-mount device in a rectangular package is designed for efficient power management at up to 150°C operating temperature.

The Onsemi FGHL50T65SQ is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 100A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature range from -55 to 175°C, and comes in a RECTANGULAR package style for FLANGE MOUNT installation.

FZ400R12KE4HOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 810ns turn off time and 370ns turn on time, it operates at up to 150°C temperature in a rectangular package style.