Littelfuse - MWT-8SP

  1. Home
  2. Littelfuse - MWT-8SP
MWT-8SP by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MWT-8SP
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; No. of Terminals: 7; Highest Frequency Band: KU BAND;
Datasheet MWT-8SP Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 6.5 dB
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): .05 pF
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 7
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: DEPLETION MODE
Highest Frequency Band: KU BAND
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NE3515S02-T1C-A by Nec Electronics

NE3515S02-T1C-A

Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): MICROWAVE; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON;
FLU17XM by Eudyna Devices

FLU17XM

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; No. of Elements: 1; Additional Features: HIGH RELIABILITY;
J309RL by Onsemi

J309RL

Onsemi

J309RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, this transistor has a Max Operating Temperature of 125 °C and 2.5pF Max Feedback Capacitance (Crss).
934056334115 by NXP Semiconductors

934056334115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Transistor Application: AMPLIFIER;
3N212 by Texas Instruments

3N212

Texas Instruments

3N212 by Texas Instruments is a N-CHANNEL FET with 27V DS Breakdown Voltage, suitable for AMPLIFIER applications. Operating in DUAL GATE mode, it offers 0.05A Drain Current and 0.36W Power Dissipation. Ideal for VERY HIGH FREQUENCY BAND circuits due to its METAL-OXIDE SEMICONDUCTOR technology.
BF904,215 by NXP Semiconductors

BF904,215

NXP Semiconductors

NXP Semiconductors' BF904,215 is an N-CHANNEL RF FET with a 7V DS breakdown voltage. It operates in the UHF band, has a max drain current of 0.03A, and features a built-in diode for amplifier applications. The transistor is surface mountable, with GULL WING terminals and a max operating temperature of 150°C.
BLF202T/R by NXP Semiconductors

BLF202T/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;
2N4221A by Texas Instruments

2N4221A

Texas Instruments

2N4221A by Texas Instruments is an N-CHANNEL RF FET with a max power dissipation of 0.3W and max operating temp of 200°C. Ideal for switching applications, it features a single configuration in a round cylindrical package with isolated case connection.
BF998R by Vishay Telefunken

BF998R

Vishay Telefunken

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF245BRL1 by Onsemi

BF245BRL1

Onsemi

BF245BRL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
STAC9200 by STMicroelectronics

STAC9200

STMicroelectronics

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
2N4416A by Linear Integrated Systems

2N4416A

Linear Integrated Systems

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; Additional Features: LOW NOISE;
BF244BRLRE by Onsemi

BF244BRLRE

Onsemi

BF244BRLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
MMBF4416 by Onsemi

MMBF4416

Onsemi

MMBF4416 by Onsemi is an N-CHANNEL RF FET with 18 dB Gp, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and 0.225 W power dissipation. With a small outline package style and tin terminal finish, it has 3 terminals in gull wing shape.
BF256AG by Onsemi

BF256AG

Onsemi

RF Small Signal Field-Effect Transistors; JESD-609 Code: e1; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);
934057513135 by NXP Semiconductors

934057513135

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Terminals: 4;
BF256B by Onsemi

BF256B

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3;
BF1212R,215 by NXP Semiconductors

BF1212R,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 6 V;
BF245CRLRM by Onsemi

BF245CRLRM

Onsemi

BF245CRLRM by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
FHX35X by Eudyna Devices

FHX35X

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: GALLIUM ARSENIDE;