Maxim Integrated - DS1750Y-70

  1. Home
  2. Maxim Integrated - DS1750Y-70
DS1750Y-70 by Maxim Integrated

Image shown is a representation only.

Manufacturer Maxim Integrated
Manufacturer's Part Number DS1750Y-70
Description NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel; No. of Words Code: 512K;
Datasheet DS1750Y-70 Datasheet
In Stock382
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 512KX8
Minimum Supply Voltage (Vsup): 2.7 V
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 32
No. of Words: 524288 words
Terminal Position: DUAL
Package Style (Meter): MICROELECTRONIC ASSEMBLY
Technology: CMOS
JESD-30 Code: R-PDMA-T32
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 70 Cel
Memory Density: 4194304 bit
Memory IC Type: NON-VOLATILE SRAM MODULE
JESD-609 Code: e0
Minimum Operating Temperature: 0 Cel
Memory Width: 8
No. of Functions: 1
Qualification: Not Qualified
Maximum Access Time: 70 ns
No. of Words Code: 512K
Nominal Supply Voltage / Vsup (V): 5
Additional Features: BATTERY BACK-UP
Parallel or Serial: PARALLEL
Temperature Grade: COMMERCIAL
Maximum Supply Voltage (Vsup): 5.5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
382 - -

Popular Products

Category Top Products

STK14C88-NF25I by Cypress Semiconductor

STK14C88-NF25I

Cypress Semiconductor

STK14C88-NF25I by Cypress Semiconductor is a 32Kx8 non-volatile SRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 25ns and consumes up to 100mA supply current. Ideal for industrial applications requiring reliable data storage in a compact small outline package.
M5M51008DVP-70H#BT by Renesas Electronics

M5M51008DVP-70H#BT

Renesas Electronics

Renesas Electronics M5M51008DVP-70H#BT is a 128Kx8 SRAM with 70ns access time, operating at 5V. It features a small outline package suitable for commercial temperature applications. Ideal for high-speed parallel memory operations in various electronic devices.
71256SA15YGI8 by Renesas Electronics

71256SA15YGI8

Renesas Electronics

STANDARD SRAM; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Terminal Finish: Matte Tin (Sn) - annealed; Maximum Time At Peak Reflow Temperature (s): 40;
CY14B101LA-SZ45XIT by Infineon Technologies

CY14B101LA-SZ45XIT

Infineon Technologies

Infineon Technologies' CY14B101LA-SZ45XIT is a 128Kx8 SRAM with 3V nominal voltage. Operating in industrial temperature range, it offers fast access time of 45ns and low standby current of 0.005A. Ideal for applications requiring high-speed data storage in compact designs.
IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access time of 10ns and low standby current consumption of 0.006A.
CAT24C44VI by Onsemi

CAT24C44VI

Onsemi

CAT24C44VI by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization. It operates at 5V, has a max access time of 375ns, and consumes up to 3mA. Ideal for industrial applications requiring small outline packages and synchronous operation.
CY62167EV30LL-45ZXA by Infineon Technologies

CY62167EV30LL-45ZXA

Infineon Technologies

CY62167EV30LL-45ZXA by Infineon Technologies is a 1MX16 SRAM with 3.6V max supply voltage, 45ns access time, and 30mA max supply current. It's ideal for industrial applications requiring high-speed data storage in a compact package with common I/O type and asynchronous operation mode.
DS1245Y-120+ by Analog Devices

DS1245Y-120+

Analog Devices

DS1245Y-120+ by Analog Devices is a 128Kx8 SRAM with 70°C max temp, 120 ns access time, and 1048576 bit memory density. Ideal for commercial applications requiring non-volatile memory ICs in microelectronic assemblies.
DS1225Y-200+ by Maxim Integrated

DS1225Y-200+

Maxim Integrated

DS1225Y-200+ by Maxim Integrated is an 8Kx8 SRAM with 8192 words, 65536 bit memory density, and 200 ns access time. It operates at a voltage range of 4.5V to 5.5V and is ideal for commercial applications requiring non-volatile memory solutions in microelectronic assemblies.
7007L20JGI by Renesas Electronics

7007L20JGI

Renesas Electronics

The Renesas Electronics 7007L20JGI is a 32Kx8 DUAL-PORT SRAM with 262144-bit memory density. It operates at 5V, has an access time of 20ns, and features a 3-STATE output. Suitable for industrial applications requiring fast parallel memory access.
5962-8855202XA by Teledyne E2v (uk)

5962-8855202XA

Teledyne E2v (uk)

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Width: 15.24 mm;
71V416L10PHGI8 by Integrated Device Technology

71V416L10PHGI8

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G44;
IS61WV102416BLL-10TLI by Integrated Silicon Solution

IS61WV102416BLL-10TLI

Integrated Silicon Solution

IS61WV102416BLL-10TLI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. Featuring 10ns access time, it's ideal for high-speed applications requiring 16-bit memory width and common I/O type. This CMOS technology-based chip offers 1M words code and supports parallel interface with low standby current of 0.02 Amp.
CY62148ELL-45ZSXIT by Cypress Semiconductor

CY62148ELL-45ZSXIT

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Standby Current: .000007 Amp;
IDT71V416S15PHGI8 by Renesas Electronics

IDT71V416S15PHGI8

Renesas Electronics

The Renesas Electronics IDT71V416S15PHGI8 is a 256Kx16 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a max access time of 15ns and offers 262144 words of memory. Ideal for industrial applications requiring fast and reliable data storage with a compact small outline thin profile package style.
IS66WVH8M8BLL-100B1LI by Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI

Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI by Integrated Silicon Solution is an 8MX8 SRAM with 100 MHz clock frequency, operating at 3.6V max. It features a thin profile grid array package and is ideal for industrial applications requiring fast access times of 40ns in synchronous mode.
CY62147EV30LL-45B2XI by Infineon Technologies

CY62147EV30LL-45B2XI

Infineon Technologies

Infineon's CY62147EV30LL-45B2XI is a 256Kx16 SRAM with 3.3V nominal voltage, operating at -40 to 85°C. It features a very thin profile grid array package, 0.75mm terminal pitch, and 45ns access time. Ideal for industrial applications requiring fast and reliable parallel memory storage.
AS7C3256A-10TIN by Alliance Memory

AS7C3256A-10TIN

Alliance Memory

Alliance Memory's AS7C3256A-10TIN is a 32Kx8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and common I/O type in a rectangular shape. With 3-state output characteristics, this CMOS technology memory IC offers fast performance for various parallel applications.
7008S55PFI8 by Integrated Device Technology

7008S55PFI8

Integrated Device Technology

7008S55PFI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage with common I/O type and 3-STATE output characteristics.
71V3576S150PFGI by Renesas Electronics

71V3576S150PFGI

Renesas Electronics

Renesas Electronics' 71V3576S150PFGI is a 128Kx36 CACHE SRAM with 150 MHz clock frequency, operating at 3.3V. It features synchronous operation, 3-STATE output, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in compact designs.