DS2432P-100-011 by Maxim Integrated | Memory ICs

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Manufacturer	Maxim Integrated
Manufacturer's Part Number	DS2432P-100-011
Description	EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: SOC; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
Datasheet	DS2432P-100-011 Datasheet
In Stock	748

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	256X4
Sub-Category:	EEPROMs
Surface Mount:	YES
No. of Terminals:	6
No. of Words:	256 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	CMOS
JESD-30 Code:	R-PDSO-C6
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Maximum Operating Temperature:	85 Cel
Endurance:	50000 Write/Erase Cycles
Package Code:	SOC
Memory Density:	1024 bit
Memory IC Type:	EEPROM
Minimum Operating Temperature:	-40 Cel
Memory Width:	4
Qualification:	Not Qualified
Package Equivalence Code:	SOC6,.17
No. of Words Code:	256
Minimum Data Retention Time:	10
Parallel or Serial:	SERIAL
Terminal Pitch:	1.27 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	3/5

Pricing (USD)

Qty.	Unit Price	Ext. Price
748	-	-

2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;