Maxim Integrated - DS28CM00S-A00+T

DS28CM00S-A00+T by Maxim Integrated

Image shown is a representation only.

Manufacturer	Maxim Integrated
Manufacturer's Part Number	DS28CM00S-A00+T
Description	Limited Part Number Data;
In Stock	2,338

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,338	-	-

Popular Products

LM555CN

Rochester Electronics

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;

SS14

Leshan Radio

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;

SMBJ18CA

Pro-an Electronic

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

BAV99

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4148

Rectron

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

1N4148

Formosa Microsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

SMBJ18CA

Good-ark Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.

BSS123-7-F

Diodes Incorporated

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.