Maxim Integrated - MAX2242EBC+T

  1. Home
  2. Maxim Integrated - MAX2242EBC+T
MAX2242EBC+T by Maxim Integrated

Image shown is a representation only.

Manufacturer Maxim Integrated
Manufacturer's Part Number MAX2242EBC+T
Description NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Maximum Voltage Standing Wave Ratio: 2.5; JESD-609 Code: e3;
Datasheet MAX2242EBC+T Datasheet
In Stock1,926
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 2400 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 335 mA
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: 0 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 2.5
No. of Terminals: 12
Maximum Input Power (CW): 10 dBm
Package Equivalence Code: BGA12,3X4,20
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 70 Cel
Maximum Operating Frequency: 2500 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Gain: 25.5 dB
Power Supplies (V): 2.7/3.6
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,926 - -

Popular Products

Category Top Products

HMC-AUH312 by Analog Devices

HMC-AUH312

Analog Devices

HMC-AUH312 by Analog Devices is a GAAS technology RF amplifier with 10 dB gain, operating from 500 MHz to 80 GHz. It has a max input power of 10 dBm and requires an 8V power supply. Ideal for wide band low power applications, this component is designed for surface mounting with a characteristic impedance of 50 ohms.
HMC441LP3ETR by Hittite Microwave

HMC441LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);
HMC606LC5TR by Analog Devices

HMC606LC5TR

Analog Devices

Analog Devices' HMC606LC5TR is a wide band low power RF amplifier with 9.5 dB gain, operating from 2-18000 MHz. It has a max input power of 15 dBm and operates on a 5V supply with 95 mA current draw. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
TQP3M9008 by Qorvo

TQP3M9008

Qorvo

TQP3M9008 by Qorvo is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Ideal for RF applications requiring high performance in plastic/epoxy package.
HMC383LC4TR by Hittite Microwave

HMC383LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
MGA-72543-TR2G by Broadcom

MGA-72543-TR2G

Broadcom

Broadcom's MGA-72543-TR2G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.
RF5110GSR by Rf Micro Devices

RF5110GSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;
CMD283C3 by Qorvo

CMD283C3

Qorvo

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.
QPA2735TR7 by Qorvo

QPA2735TR7

Qorvo

WIDE BAND LOW POWER;
ADL8142ACPZN-R7-CSL by Analog Devices

ADL8142ACPZN-R7-CSL

Analog Devices

WIDE BAND LOW POWER;
SST12LP08-QXBE by Microchip Technology

SST12LP08-QXBE

Microchip Technology

SST12LP08-QXBE by Microchip is a RF amplifier with 29 dB gain, operating frequency range of 2412-2484 MHz, and 5 dBm max input power. It is designed for narrow band medium power applications, featuring a 50 ohm characteristic impedance and surface mounting feature.
HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
MGA-86576 by Agilent Technologies

MGA-86576

Agilent Technologies

Agilent Technologies' MGA-86576 is a RF & Microwave Amplifier with GaAs technology, 5V power supply, and 22mA max current. It has a metal package for surface mount applications in various electronic devices.
HMC311LP3ETR by Analog Devices

HMC311LP3ETR

Analog Devices

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.
RF5110GSR by Qorvo

RF5110GSR

Qorvo

Qorvo's RF5110GSR is a wideband medium power amplifier with 33dB gain, operating from 150MHz to 960MHz. It has a max input power of 13dBm and VSWR of 10, suitable for RF & microwave applications requiring high performance in a compact form factor. The hybrid construction and surface mount feature make it ideal for various communication systems.
QPA1003P by Qorvo

QPA1003P

Qorvo

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.
ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.
HMC794LP3E by Hittite Microwave

HMC794LP3E

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 2000 MHz; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 200 MHz; Maximum Operating Temperature: 85 Cel;
BGA2870,115 by NXP Semiconductors

BGA2870,115

NXP Semiconductors

NXP Semiconductors' BGA2870,115 is a RF & Microwave Amplifier with 2.5V power supply, 6 terminals, and 18.5mA max supply current. It features a plastic/epoxy package body material and tin terminal finish, suitable for surface mount applications in various electronic devices.
HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.