Maxim Integrated - MAX2840EBC-T

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e4; Minimum Operating Temperature: -55 Cel; Gain: 14 dB;

XTRF1208RPVR by Texas Instruments is a wide band low power RF amplifier with 16 dB gain. Operating from 10 MHz to 11 GHz, it features BICMOS technology and a characteristic impedance of 50 ohm. Ideal for applications requiring surface mount components in the RF & Microwave domain.

Qorvo's NBB-400 is a ceramic-packaged RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates b/w -45°C to +85°C temperatures and requires a 3.9V supply voltage.

Qorvo's RDA1005LSR is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 7.2;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10.5 dB;

SKY65624-682LF by Skyworks Solutions is a RF amplifier with 16dB gain, operating frequency range of 1559-1606MHz. It has VSWR of 1.5, BICMOS technology, and can handle up to 0dBm input power. Ideal for narrowband low-power applications in RF & microwave systems due to its compact size and surface mount feature.

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

AD8350ARMZ15 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain, operating up to 1000 MHz. It can handle max input power of 8 dBm and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

The NXP Semiconductors MMG20241HT1 is a GAAS RF amplifier with 18.4 dB gain, operating from 450 MHz to 3800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems. The component is surface-mountable with matte tin terminals and a characteristic impedance of 50 ohms.

The NXP Semiconductors BGU6101,147 is a wide band low power RF amplifier with 4dB gain. It operates b/w 40MHz to 4000MHz, suitable for various RF and microwave applications. With a max supply current of 10mA and operating temperature range from -40°C to 85°C, it is ideal for surface mount installations.

Analog Devices' HMC8205BF10 is a wideband high-power RF amplifier with 25 dB gain and 35 dBm CW input power. Operating from 300 MHz to 6 GHz, it features a characteristic impedance of 50 ohms. Ideal for applications requiring high-power amplification in RF and microwave systems.

SGA3363Z by Qorvo is a RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wide band low power applications, this component features a plastic/epoxy package and requires a 2.6V power supply.

Qorvo's QPA4501SR is a GAN RF amplifier with 26dB gain, operating from 4400-5000MHz. It offers 12dBm CW input power and VSWR of 10, suitable for narrowband high-power applications in RF & microwave systems. The component has 36 terminals, surface-mountable in plastic/epoxy package for easy integration.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

NXP Semiconductors' MMZ09332BT1 is a narrow band medium power RF amplifier with 28.7 dB gain and 29 dBm max input power. Operating from 130 MHz to 1000 MHz, it's ideal for applications requiring high-frequency amplification in RF and microwave systems.

HMC608LC4 by Analog Devices is a wide band medium power RF amplifier with 27 dB gain. It operates b/w 9500-11500 MHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.

Broadcom's MGA-545P8-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 50 MHz to 7 GHz. It has a max input power of 20 dBm and operates on a 3.3V power supply. This wide band medium power amplifier is ideal for applications requiring surface mount construction in RF & microwave systems.