MAX8512EXK-T by Maxim Integrated | Regulators

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Manufacturer	Maxim Integrated
Manufacturer's Part Number	MAX8512EXK-T
Description	ADJUSTABLE POSITIVE SINGLE OUTPUT LDO REGULATOR; No. of Terminals: 5; Package Code: TSSOP; Terminal Form: GULL WING; No. of Functions: 1; Maximum Operating Temperature: 85 Cel;
Datasheet	MAX8512EXK-T Datasheet
In Stock	1,373

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	20
Maximum Seated Height:	1.1 mm
Sub-Category:	Other Regulators
Surface Mount:	YES
Regulator Type:	ADJUSTABLE POSITIVE SINGLE OUTPUT LDO REGULATOR
Terminal Finish:	TIN LEAD
No. of Outputs:	1
Maximum Output Current-1:	.12 A
No. of Terminals:	5
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Technology:	BICMOS
JESD-30 Code:	R-PDSO-G5
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Operating Temperature (TJ-Max):	150 Cel
Package Code:	TSSOP
Qualification Status:	Not Qualified
Width:	1.25 mm
Moisture Sensitivity Level (MSL):	1
Maximum Output Voltage-1:	4.5 V
Packing Method:	TR
Minimum Output Voltage-1:	1.5 V
JESD-609 Code:	e0
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Package Equivalence Code:	TSSOP5/6,.08
Nominal Dropout Voltage-1:	.18 V
Length:	2 mm
Adjustability:	ADJUSTABLE
Peak Reflow Temperature (C):	240
Terminal Pitch:	.65 mm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,373	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;