TSC428CBA-T by Maxim Integrated | Interface ICs

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Manufacturer	Maxim Integrated
Manufacturer's Part Number	TSC428CBA-T
Description	BUFFER OR INVERTER BASED MOSFET DRIVER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Datasheet	TSC428CBA-T Datasheet
In Stock	2,471

NAME	DESCRIPTION
Minimum Supply Voltage:	4.5 V
Package Body Material:	PLASTIC/EPOXY
Maximum Seated Height:	1.75 mm
Sub-Category:	MOSFET Drivers
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G8
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	70 Cel
Package Code:	SOP
Interface IC Type:	BUFFER OR INVERTER BASED MOSFET DRIVER
Width:	3.9 mm
Turn-off Time:	.06 us
High Side Driver:	NO
Maximum Supply Voltage:	18 V
Turn-on Time:	.12 us
Nominal Output Peak Current Limit:	1.5 A
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
No. of Functions:	2
Qualification:	Not Qualified
Package Equivalence Code:	SOP8,.25
Length:	4.9 mm
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL
Power Supplies (V):	4.5/18

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,471	-	-

BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.